FDFMA3P029Z datasheet

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О ДАТАШИТЕ

• Маркировка
  FDFMA3P029Z
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDFMA3P029Z Configuration: Single with Schottky Diode Continuous Drain Current: - 3.3 A Drain-source Breakdown Voltage: - 30 V Fall Time: 11 ns Forward Transconductance Gfs (max / Min): 6 S Gate Charge Qg: 7.2 nC Gate-source Breakdown Voltage: 25 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: MicroFET 2x2 Power Dissipation: 1.4 W Resistance Drain-source Rds (on): 87 mOhms Rise Time: 3 ns Rohs: yes Transistor Polarity: P-Channel Typical Turn-off Delay Time: 17 ns RoHS: yes Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 25 V Resistance Drain-Source RDS (on): 87 mOhms Forward Transconductance gFS (Max / Min): 6 S Typical Turn-Off Delay Time: 17 ns
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

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